IRLH5030TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Radiation Hardening :

No

Height :

990.6μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9mOhm @ 50A, 10V

Number of Pins :

8

Rds On Max :

9 mΩ

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

5185pF @ 50V

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

13A Ta 100A Tc

Continuous Drain Current (ID) :

100A

Power Dissipation :

250W

Published :

2010

Supplier Device Package :

PQFN (5x6) Single Die

Threshold Voltage :

2.5V

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

1

Mount :

Surface Mount

Rise Time :

72ns

FET Type :

N-Channel

Nominal Vgs :

2.5 V

Fall Time (Typ) :

41 ns

Drain to Source Resistance :

9.9mOhm

Input Capacitance :

5.185nF

Turn-Off Delay Time :

41 ns

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Min Operating Temperature :

-55°C

Recovery Time :

48 ns

Turn On Delay Time :

21 ns

Length :

6.1468mm

Width :

5.15mm

Packaging :

Cut Tape (CT)

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Max Power Dissipation :

3.6W

Package / Case :

8-PowerVDFN