IRLHM630TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.1V @ 50μA

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Power Dissipation-Max :

2.7W Ta 37W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3170pF @ 25V

Width :

3.3mm

Factory Lead Time :

12 Weeks

Rise Time :

32ns

Turn On Delay Time :

9.1 ns

Continuous Drain Current (ID) :

21A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

S-PDSO-N5

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

65 ns

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 4.5V

Series :

HEXFET®

Vgs (Max) :

±12V

Resistance :

4.5mOhm

Mount :

Surface Mount

Fall Time (Typ) :

43 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc

Radiation Hardening :

No

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Pins :

8

Threshold Voltage :

800mV

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-VQFN Exposed Pad

Length :

3.3mm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Power Dissipation :

37W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

800 mV

Height :

1mm