IRLHM630TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

37W

Nominal Vgs :

800 mV

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

2.7W

Width :

3.3mm

Turn-Off Delay Time :

65 ns

Fall Time (Typ) :

43 ns

Length :

3.2766mm

REACH SVHC :

No SVHC

Package / Case :

8-VQFN Exposed Pad

Rise Time :

32ns

Packaging :

Cut Tape (CT)

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3170pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 4.5V

ECCN Code :

EAR99

Number of Pins :

8

Turn On Delay Time :

9.1 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc

Number of Elements :

1

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 4.5V

Recovery Time :

30 ns

Max Operating Temperature :

150°C

Mount :

Surface Mount

Continuous Drain Current (ID) :

21A

Vgs(th) (Max) @ Id :

1.1V @ 50μA

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

990.6μm