IRLH5030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

1

Resistance :

9.9mOhm

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

100A

Vgs (Max) :

±16V

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Turn On Delay Time :

21 ns

JESD-609 Code :

e3

Turn-Off Delay Time :

41 ns

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

13A Ta 100A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.5V @ 150μA

ECCN Code :

EAR99

Rise Time :

72ns

Nominal Vgs :

2.5 V

Length :

6.1468mm

Terminal Position :

Dual

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Height :

990.6μm

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Fall Time (Typ) :

41 ns

Power Dissipation-Max :

3.6W Ta 156W Tc

Transistor Application :

SWITCHING

Power Dissipation :

3.6W

JESD-30 Code :

R-PDSO-N5

Avalanche Energy Rating (Eas) :

230 mJ

Transistor Element Material :

SILICON

Published :

2010

Threshold Voltage :

2.5V

Input Capacitance (Ciss) (Max) @ Vds :

5185pF @ 50V

Pulsed Drain Current-Max (IDM) :

400A

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Terminations :

5

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

Terminal Finish :

Matte Tin (Sn)

Width :

5.15mm