IRLH5034TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

400A

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

21 ns

Continuous Drain Current (ID) :

100A

Number of Pins :

8

Drain to Source Breakdown Voltage :

40V

Width :

5.15mm

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 50A, 10V

Terminal Position :

Dual

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation :

156W

Series :

HEXFET®

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

360 mJ

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

Packaging :

Tape and Reel (TR)

Published :

2010

FET Type :

N-Channel

Length :

6.1468mm

Mounting Type :

Surface Mount

Resistance :

3.2mOhm

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V

Additional Feature :

High Reliability

Rise Time :

54ns

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Mount :

Surface Mount

Height :

990.6μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

31 ns

Number of Terminations :

5

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

29A

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

16V

Fall Time (Typ) :

21 ns

Radiation Hardening :

No

Power Dissipation-Max :

3.6W Ta 156W Tc

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±16V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-N5

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerVDFN