IRLH5036TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Rise Time :

48ns

Max Power Dissipation :

3.6W

Current - Continuous Drain (Id) @ 25°C :

20A Ta 100A Tc

Width :

5.0038mm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Drain to Source Resistance :

4.4mOhm

Height :

810μm

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Number of Elements :

1

Nominal Vgs :

1 V

Length :

5mm

Number of Pins :

8

Supplier Device Package :

8-PQFN (5x6)

Continuous Drain Current (ID) :

100A

Published :

2012

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

60V

Input Capacitance :

5.36nF

Recovery Time :

42 ns

Turn-Off Delay Time :

28 ns

Threshold Voltage :

1V

Turn On Delay Time :

23 ns

Radiation Hardening :

No

Mount :

Surface Mount

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

16V

Rds On Max :

4.4 mΩ

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

160W

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5360pF @ 25V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

4.4mOhm @ 50A, 10V