IRLHS6276TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Min Operating Temperature :

-55°C

Threshold Voltage :

800mV

Input Capacitance :

310pF

Power - Max :

1.5W

Element Configuration :

Dual

Width :

2.1mm

Power Dissipation :

1.5W

Turn On Delay Time :

4.4 ns

Drain to Source Breakdown Voltage :

20V

Series :

HEXFET®

Supplier Device Package :

6-PQFN Dual (2x2)

Height :

950μm

Rds On (Max) @ Id, Vgs :

45mOhm @ 3.4A, 4.5V

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

Package / Case :

6-PowerVDFN

Rds On Max :

45 mΩ

Turn-Off Delay Time :

10 ns

Number of Pins :

6

Base Part Number :

IRLHS6276PBF

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Length :

2.1mm

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

2

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Power Dissipation :

1.5W

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Drain to Source Resistance :

45mOhm

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.5A

Nominal Vgs :

800 mV

Continuous Drain Current (ID) :

4.5A

Max Operating Temperature :

150°C

Fall Time (Typ) :

4.9 ns

Recovery Time :

7.8 ns

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

FET Feature :

Logic Level Gate

Rise Time :

9.3ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

12V