IRGSL4062DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Length :

10.67mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time-Max (tf) :

41ns

Case Connection :

COLLECTOR

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

41ns/104ns

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Input Type :

Standard

Published :

2009

Gate-Emitter Thr Voltage-Max :

6.5V

Current - Collector Pulsed (Icm) :

96A

Switching Energy :

115μJ (on), 600μJ (off)

Transistor Application :

POWER CONTROL

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Width :

4.83mm

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Max Collector Current :

48A

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

REACH SVHC :

No SVHC

Test Condition :

400V, 24A, 10 Ω, 15V

Reverse Recovery Time :

89 ns

Height :

9.65mm

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.95V

Collector Emitter Voltage (VCEO) :

1.95V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Power Dissipation :

250W

Number of Pins :

3

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

164 ns

Turn On Time :

64 ns

Gate Charge :

50nC

Max Power Dissipation :

250W

IGBT Type :

Trench

Factory Lead Time :

16 Weeks