IRGSL30B60KPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Published :

2005

Gate-Emitter Voltage-Max :

20V

Turn On Time :

74 ns

Transistor Application :

Motor Control

Gate-Emitter Thr Voltage-Max :

5.5V

Td (on/off) @ 25°C :

46ns/185ns

Fall Time-Max (tf) :

42ns

Input Type :

Standard

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Weight :

2.084002g

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Pulsed (Icm) :

120A

Max Power Dissipation :

370W

Number of Pins :

3

RoHS Status :

RoHS Compliant

Gate Charge :

102nC

Polarity/Channel Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

10.668mm

Collector Emitter Saturation Voltage :

2.35V

Test Condition :

400V, 30A, 10 Ω, 15V

Collector Emitter Voltage (VCEO) :

2.35V

Max Collector Current :

78A

Height :

9.652mm

ECCN Code :

EAR99

Width :

4.826mm

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

Number of Elements :

1

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

370W

Radiation Hardening :

No

IGBT Type :

NPT

Turn Off Time-Nom (toff) :

237 ns

Mounting Type :

Through Hole

Mount :

Through Hole

Case Connection :

COLLECTOR

Factory Lead Time :

11 Weeks

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Operating Temperature :

-55°C~175°C TJ

Switching Energy :

350μJ (on), 825μJ (off)