IRGSL15B60KDPBF
- Mfr.Part #
- IRGSL15B60KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IGBT W/ULTRAFAST SOFT RECOVERY D
- Stock
- 12,576
- In Stock :
- 12,576
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- RoHS Compliant
- Rise Time-Max :
- 25ns
- Max Power Dissipation :
- 208W
- Number of Pins :
- 3
- Additional Feature :
- ULTRA FAST
- Mount :
- Through Hole
- Transistor Application :
- Motor Control
- Power - Max :
- 208W
- JESD-609 Code :
- e3
- IGBT Type :
- NPT
- Peak Reflow Temperature (Cel) :
- 260
- Switching Energy :
- 220μJ (on), 340μJ (off)
- ECCN Code :
- EAR99
- Published :
- 2005
- Factory Lead Time :
- 16 Weeks
- Gate Charge :
- 56nC
- Collector Emitter Breakdown Voltage :
- 600V
- Td (on/off) @ 25°C :
- 34ns/184ns
- Turn On Time :
- 52 ns
- Turn Off Time-Nom (toff) :
- 231 ns
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Pulsed (Icm) :
- 62A
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Terminations :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 15A
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Reverse Recovery Time :
- 92 ns
- Test Condition :
- 400V, 15A, 22 Ω, 15V
- Max Collector Current :
- 31A
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Gate-Emitter Voltage-Max :
- 20V
- Input Type :
- Standard
- Datasheets
- IRGSL15B60KDPBF

IRGSL15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGSL15B60KDPBF Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRGSL15B60KDPBF Features
? IGBT technology with low VCE (on) and no punch through.
? Low VF Diode.
? Short Circuit Capability of 10 s.
? RBSOA in Square.
IRGSL15B60KDPBF Applications
Switching applications
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