IRGS8B60KTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

5.5V

Mount :

Surface Mount

Number of Pins :

3

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

2.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Operating Temperature :

-55°C~175°C TJ

Weight :

260.39037mg

Mounting Type :

Surface Mount

Max Collector Current :

28A

Current - Collector Pulsed (Icm) :

34A

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Td (on/off) @ 25°C :

23ns/140ns

Test Condition :

400V, 8A, 50 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Width :

9.652mm

Fall Time-Max (tf) :

56ns

Published :

2010

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

Transistor Application :

Motor Control

Time@Peak Reflow Temperature-Max (s) :

30

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 8A

Height :

4.699mm

IGBT Type :

NPT

Factory Lead Time :

11 Weeks

Gate Charge :

29nC

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

167W

Max Breakdown Voltage :

600V

JESD-609 Code :

e3

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Turn On Time :

43 ns

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate-Emitter Voltage-Max :

20V

Number of Terminations :

2

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

220 ns

Number of Elements :

1

Base Part Number :

IRGS8B60KPBF

Max Power Dissipation :

167W

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Switching Energy :

160μJ (on), 160μJ (off)

Transistor Element Material :

SILICON

Rise Time-Max :

26ns