IRGS6B60KTRLPBF
- Mfr.Part #
- IRGS6B60KTRLPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IRGS6B60 - IGBT WITH ULTRAFAST S
- Stock
- 20,000
- In Stock :
- 20,000
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 13A
- Turn On Time :
- 45 ns
- Power Dissipation :
- 90W
- Length :
- 10.668mm
- Case Connection :
- COLLECTOR
- Current - Collector Pulsed (Icm) :
- 26A
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Width :
- 9.652mm
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Input Type :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 90W
- Published :
- 2004
- Td (on/off) @ 25°C :
- 25ns/215ns
- Collector Emitter Voltage (VCEO) :
- 2.2V
- IGBT Type :
- NPT
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 600V
- Base Part Number :
- IRGS6B60KPBF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 260.39037mg
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Turn Off Time-Nom (toff) :
- 258 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Switching Energy :
- 110μJ (on), 135μJ (off)
- Gate Charge :
- 18.2nC
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- Motor Control
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Height :
- 4.699mm
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRGS6B60KTRLPBF

IRGS6B60KTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS6B60KTRLPBF Description
IRGS6B60KTRLPBF is a 600V insulated gate bipolar transistor. The Infineon IRGS6B60KTRLPBF can be applied in Automotive, Advanced driver assistance systems (ADAS), Communications equipment, Wired networking, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGS6B60KTRLPBF is in the TO-220AB package with 90W power dissipation.
IRGS6B60KTRLPBF Features
Low VCE (on) Non-Punch Through IGBT Technology
10μs Short Circuit Capability
Square RBSOA
Positive VCE (on) Temperature Coefficient
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
IRGS6B60KTRLPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Communications equipment
Wired networking
Enterprise systems
Datacenter & enterprise computing
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