IRGS6B60KPBF
- Mfr.Part #
- IRGS6B60KPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT, 13A I(C), 600V V(BR)CES, N
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 11 Weeks
- Switching Energy :
- 110μJ (on), 135μJ (off)
- Number of Terminations :
- 2
- Collector Emitter Saturation Voltage :
- 1.8V
- JESD-30 Code :
- R-PSSO-G2
- Turn Off Time-Nom (toff) :
- 258 ns
- Max Power Dissipation :
- 90W
- Base Part Number :
- IRGS6B60KPBF
- Turn On Time :
- 45 ns
- Transistor Application :
- Motor Control
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 2.2V
- IGBT Type :
- NPT
- Gate Charge :
- 18.2nC
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Width :
- 9.652mm
- Element Configuration :
- Single
- Length :
- 10.67mm
- Published :
- 2004
- Terminal Form :
- Gull wing
- Current - Collector Pulsed (Icm) :
- 26A
- Voltage - Rated DC :
- 600V
- Td (on/off) @ 25°C :
- 25ns/215ns
- Max Collector Current :
- 13A
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 90W
- Number of Elements :
- 1
- Number of Pins :
- 3
- Height :
- 4.703mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Case Connection :
- COLLECTOR
- Current Rating :
- 13A
- Rise Time :
- 17ns
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Mount :
- Surface Mount
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 600V
- Datasheets
- IRGS6B60KPBF

IRGS6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS6B60KPBF Description
IRGS6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGS6B60KPBF IGBT delivers rugged transient performance and low EMI.
IRGS6B60KPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGS6B60KPBF Applications
UPS
Motor control
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