IRGS6B60KPBF
- Mfr.Part #
- IRGS6B60KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 13A 90W D2PAK
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Rise Time :
- 17ns
- Collector Emitter Saturation Voltage :
- 1.8V
- Length :
- 10.67mm
- Lead Free :
- Lead Free
- Current Rating :
- 13A
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Transistor Application :
- Motor Control
- Radiation Hardening :
- No
- Packaging :
- Tube
- Power Dissipation :
- 90W
- Mounting Type :
- Surface Mount
- Switching Energy :
- 110μJ (on), 135μJ (off)
- ECCN Code :
- EAR99
- Width :
- 9.652mm
- Turn Off Time-Nom (toff) :
- 258 ns
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 4.703mm
- IGBT Type :
- NPT
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Max Collector Current :
- 13A
- Base Part Number :
- IRGS6B60KPBF
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Td (on/off) @ 25°C :
- 25ns/215ns
- Current - Collector Pulsed (Icm) :
- 26A
- Element Configuration :
- Single
- Gate Charge :
- 18.2nC
- Max Power Dissipation :
- 90W
- Factory Lead Time :
- 11 Weeks
- Collector Emitter Breakdown Voltage :
- 600V
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time :
- 45 ns
- RoHS Status :
- RoHS Compliant
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Published :
- 2004
- Mount :
- Surface Mount
- Datasheets
- IRGS6B60KPBF

IRGS6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS6B60KPBF Description
IRGS6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGS6B60KPBF IGBT delivers rugged transient performance and low EMI.
IRGS6B60KPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGS6B60KPBF Applications
UPS
Motor control
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