IRGS6B60KDTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Base Part Number :

IRGS6B60KDPBF

Number of Elements :

1

Transistor Element Material :

SILICON

Turn On Time :

45 ns

Factory Lead Time :

13 Weeks

Transistor Application :

Motor Control

Td (on/off) @ 25°C :

25ns/215ns

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

90W

Reverse Recovery Time :

70 ns

Radiation Hardening :

No

Element Configuration :

Single

Max Collector Current :

13A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

2.2V

Mount :

Surface Mount

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

258 ns

Switching Energy :

110μJ (on), 135μJ (off)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Power - Max :

90W

Current - Collector Pulsed (Icm) :

26A

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Gate Charge :

18.2nC

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 5A

IGBT Type :

NPT

Test Condition :

400V, 5A, 100 Ω, 15V

Published :

2013

Collector Emitter Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

30

Input Type :

Standard

Number of Terminations :

2