IRGS6B60KDTRLP
- Mfr.Part #
- IRGS6B60KDTRLP
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 11A, 600V, N CHANNEL
- Stock
- 11,263
- In Stock :
- 11,263
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mount :
- Surface Mount
- Max Collector Current :
- 13A
- Td (on/off) @ 25°C :
- 25ns/215ns
- Published :
- 2004
- IGBT Type :
- NPT
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Weight :
- 260.39037mg
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Current - Collector Pulsed (Icm) :
- 26A
- Reverse Recovery Time :
- 70 ns
- Turn Off Time-Nom (toff) :
- 258 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Switching Energy :
- 110μJ (on), 135μJ (off)
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Power - Max :
- 90W
- Max Power Dissipation :
- 90W
- Factory Lead Time :
- 13 Weeks
- Input Type :
- Standard
- Max Breakdown Voltage :
- 600V
- Gate Charge :
- 18.2nC
- Number of Elements :
- 1
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transistor Application :
- Motor Control
- Base Part Number :
- IRGS6B60KDPBF
- Terminal Form :
- Gull wing
- Turn On Time :
- 45 ns
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- IRGS6B60KDTRLP

IRGS6B60KDTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS6B60KDTRLP Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRGS6B60KDTRLP Features
? IGBT technology with low VCE (on) and no punch through.
? Low VF Diode.
? Short Circuit Capability of 10 s.
? RBSOA in Square.
? Reverse Recovery Characteristics of Ultrasoft Diodes.
? A positive temperature coefficient for the VCE (on).
? Free of lead
IRGS6B60KDTRLP Applications
Switching applications
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