IRGS6B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Width :

9.65mm

Peak Reflow Temperature (Cel) :

260

Published :

2012

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

26A

Power Dissipation :

90W

Base Part Number :

IRGS6B60KDPBF

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

600V

Current Rating :

13A

Collector Emitter Saturation Voltage :

2V

Gate-Emitter Thr Voltage-Max :

5.5V

Factory Lead Time :

13 Weeks

Radiation Hardening :

No

Packaging :

Tube

Max Power Dissipation :

90W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn Off Time-Nom (toff) :

258 ns

Collector Emitter Voltage (VCEO) :

2.2V

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

IGBT Type :

NPT

Number of Terminations :

2

Terminal Form :

Gull wing

Switching Energy :

110μJ (on), 135μJ (off)

Rise Time :

17ns

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Fall Time-Max (tf) :

27ns

ECCN Code :

EAR99

Element Configuration :

Single

Voltage - Rated DC :

600V

JESD-30 Code :

R-PSSO-G2

Height :

4.699mm

Max Collector Current :

13A

Turn On Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

400V, 5A, 100 Ω, 15V

REACH SVHC :

No SVHC

Gate Charge :

18.2nC

Reverse Recovery Time :

70 ns

Number of Elements :

1

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 5A

Length :

10.668mm

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Td (on/off) @ 25°C :

25ns/215ns

Number of Pins :

3

Transistor Application :

Motor Control

JESD-609 Code :

e3

Transistor Element Material :

SILICON