IRGS4B60KD1TRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2004

JESD-609 Code :

e3

Base Part Number :

IRGS4B60KD1PBF

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Gate Charge :

12nC

Reverse Recovery Time :

93 ns

Current - Collector Pulsed (Icm) :

22A

Max Collector Current :

11A

Td (on/off) @ 25°C :

22ns/100ns

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

MATTE TIN

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Test Condition :

400V, 4A, 100 Ω, 15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Time :

40 ns

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Collector Emitter Voltage (VCEO) :

2.5V

Number of Pins :

3

Number of Terminations :

2

IGBT Type :

NPT

Terminal Form :

Gull wing

Turn Off Time-Nom (toff) :

199 ns

Switching Energy :

73μJ (on), 47μJ (off)

Element Configuration :

Single

Power - Max :

63W

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

Motor Control

Input Type :

Standard

Max Power Dissipation :

63W