IRGS4B60KD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

22ns/100ns

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Collector Emitter Saturation Voltage :

2.5V

Lead Free :

Lead Free

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Turn Off Time-Nom (toff) :

199 ns

Reverse Recovery Time :

93 ns

Collector Emitter Voltage (VCEO) :

2.5V

Base Part Number :

IRGS4B60KD1PBF

Radiation Hardening :

No

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current Rating :

11A

Power Dissipation :

63W

Collector Emitter Breakdown Voltage :

600V

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

5.5V

IGBT Type :

NPT

Input Type :

Standard

Max Collector Current :

11A

Fall Time-Max (tf) :

89ns

RoHS Status :

RoHS Compliant

Transistor Application :

Motor Control

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Switching Energy :

73μJ (on), 47μJ (off)

Factory Lead Time :

13 Weeks

Width :

9.652mm

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Rise Time :

23ns

Test Condition :

400V, 4A, 100 Ω, 15V

Length :

10.668mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Collector Pulsed (Icm) :

22A

Number of Pins :

3

Published :

2003

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Turn On Time :

40 ns

Gate Charge :

12nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

Max Power Dissipation :

63W

Element Configuration :

Single

REACH SVHC :

No SVHC

Height :

4.699mm