IRGS4610DPBF

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Mfr.Part #
IRGS4610DPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 600V 16A 77W D2PAK
Stock
238
In Stock :
238

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Peak Reflow Temperature (Cel) :
260
Test Condition :
400V, 6A, 47 Ω, 15V
Weight :
260.39037mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
16A
Packaging :
Tube
Collector Emitter Breakdown Voltage :
600V
Mount :
Surface Mount
Gate-Emitter Thr Voltage-Max :
6.5V
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
1.7V
Max Power Dissipation :
77W
Collector Emitter Voltage (VCEO) :
2V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Input Type :
Standard
Height :
4.83mm
Gate Charge :
13nC
Operating Temperature :
-40°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
30
Element Configuration :
Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power - Max :
77W
REACH SVHC :
No SVHC
Td (on/off) @ 25°C :
27ns/75ns
Width :
9.65mm
RoHS Status :
RoHS Compliant
ECCN Code :
EAR99
Gate-Emitter Voltage-Max :
20V
Polarity/Channel Type :
N-Channel
Number of Pins :
3
Published :
2001
Reverse Recovery Time :
74 ns
JESD-609 Code :
e3
Current - Collector Pulsed (Icm) :
18A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 6A
Length :
10.67mm
Switching Energy :
56μJ (on), 122μJ (off)
Datasheets
IRGS4610DPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGS4610DPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IRGS4610DPBF pinout, IRGS4610DPBF datasheet PDF, IRGS4610DPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGS4610DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGS4610DPBF


IRGS4610DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGS4610DPBF                                 Description


The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

 



IRGS4610DPBF                      Applications


? Appliance Drives

? Inverters

? UPS

 

 


IRGS4610DPBF                      Features

■ High frequency operation up to 50 kHz

■ Lower CRES / CIES ratio (no cross-conduction

susceptibility)

■ High current capability


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