IRGS4607DTRLPBF
- Mfr.Part #
- IRGS4607DTRLPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IRGS4607 - DISCRETE IGBT WITH AN
- Stock
- 3,200
- In Stock :
- 3,200
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 600V
- Test Condition :
- 400V, 4A, 100 Ω, 15V
- Transistor Application :
- POWER CONTROL
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Time :
- 51 ns
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Published :
- 2014
- Collector Emitter Saturation Voltage :
- 2.2V
- Transistor Element Material :
- SILICON
- Current - Collector Pulsed (Icm) :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Max Power Dissipation :
- 58W
- Weight :
- 260.39037mg
- RoHS Status :
- RoHS Compliant
- Td (on/off) @ 25°C :
- 27ns/120ns
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -40°C~175°C TJ
- Gate Charge :
- 9nC
- Max Collector Current :
- 7A
- Input Type :
- Standard
- Switching Energy :
- 140μJ (on), 62μJ (off)
- Reverse Recovery Time :
- 48 ns
- Turn Off Time-Nom (toff) :
- 95 ns
- Current - Collector (Ic) (Max) :
- 11A
- JESD-30 Code :
- R-PSSO-G2
- Vce(on) (Max) @ Vge, Ic :
- 2.05V @ 15V, 4A
- Collector Emitter Voltage (VCEO) :
- 2.05V
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRGS4607DTRLPBF

IRGS4607DTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS4607DTRLPBF Description
The IRGS4607DTRLPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).
IRGS4607DTRLPBF Features
-
Maximum Junction Temperature 175°C
-
Positive VCE (ON) Temperature Coefficient
-
Square RBSOA
-
Low VCE(ON) and Switching Losses
-
5μs Short Circuit SOA
IRGS4607DTRLPBF Applications
-
Solar Inverters
-
Welding
-
Industrial Motor Drive
-
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