IRGS4065PBF
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- Mfr.Part #
- IRGS4065PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 300V 70A 178W D2PAK
- Stock
- 3,432
- In Stock ：
- 3,432
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Operating Temperature :
- -40°C~150°C TJ
- IGBT Type :
- Trench
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition :
- 180V, 25A, 10 Ω
- Current - Collector (Ic) (Max) :
- 70A
- Input Type :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 70A
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Power - Max :
- 178W
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Gate Charge :
- 62nC
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 30ns/170ns
- Reach Compliance Code :
- Compliant
- Datasheets
- IRGS4065PBF
IRGS4065PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS4065PBF Description
This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. Operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.
IRGS4065PBF Features
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Optimized for sustain and energy recovery circuits in PDP applications, advanced trench IGBT technology
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For increased panel efficiency, use low VCE(on) and energy per pulse (EPULSETM).
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High capacity for repeating peak current
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Lead-free packaging
IRGS4065PBF Applications
Switching applications
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