IRGS4064DPBF
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- Mfr.Part #
- IRGS4064DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT WITH RECOVERY DIODE
- Stock
- 19,442
- In Stock ：
- 19,442
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Fall Time-Max (tf) :
- 29ns
- Test Condition :
- 400V, 10A, 22 Ω, 15V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Power Dissipation :
- 101W
- Collector Emitter Saturation Voltage :
- 1.6V
- Gate-Emitter Voltage-Max :
- 20V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Published :
- 2012
- Length :
- 10.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Vce(on) (Max) @ Vge, Ic :
- 1.91V @ 15V, 10A
- Mount :
- Surface Mount
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 40A
- Switching Energy :
- 29μJ (on), 200μJ (off)
- Number of Pins :
- 3
- Max Collector Current :
- 20A
- RoHS Status :
- RoHS Compliant
- Weight :
- 260.39037mg
- REACH SVHC :
- No SVHC
- Width :
- 9.65mm
- Td (on/off) @ 25°C :
- 27ns/79ns
- Power - Max :
- 101W
- Height :
- 4.83mm
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- IGBT Type :
- Trench
- Reverse Recovery Time :
- 62 ns
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 1.91V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Gate Charge :
- 32nC
- Datasheets
- IRGS4064DPBF
IRGS4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS4064DPBF Description
IRGS4064DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well-suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.
IRGS4064DPBF Features
Low VCE (on) Trench IGBT technology
Low switching losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
Positive VCE (on) temperature coefficient
IRGS4064DPBF Applications
Industrial motor drive
UPS
Solar Inverters
Welding
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