IRGS4064DPBF
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- Mfr.Part #
- IRGS4064DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 20A 101W D2PAK
- Stock
- 5,699
- In Stock ：
- 5,699
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- 27ns/79ns
- Gate-Emitter Voltage-Max :
- 20V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- Power - Max :
- 101W
- Max Collector Current :
- 20A
- Lead Free :
- Lead Free
- Factory Lead Time :
- 20 Weeks
- Input Type :
- Standard
- Packaging :
- Tube
- Height :
- 4.83mm
- Switching Energy :
- 29μJ (on), 200μJ (off)
- Fall Time-Max (tf) :
- 29ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Reverse Recovery Time :
- 62 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Test Condition :
- 400V, 10A, 22 Ω, 15V
- Collector Emitter Saturation Voltage :
- 1.6V
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- IGBT Type :
- Trench
- Vce(on) (Max) @ Vge, Ic :
- 1.91V @ 15V, 10A
- Radiation Hardening :
- No
- Width :
- 9.65mm
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Published :
- 2012
- Weight :
- 260.39037mg
- Gate Charge :
- 32nC
- Current - Collector Pulsed (Icm) :
- 40A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Max Power Dissipation :
- 101W
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 1.91V
- Length :
- 10.67mm
- Datasheets
- IRGS4064DPBF
IRGS4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS4064DPBF Description
IRGS4064DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well-suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.
IRGS4064DPBF Features
Low VCE (on) Trench IGBT technology
Low switching losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
Positive VCE (on) temperature coefficient
IRGS4064DPBF Applications
Industrial motor drive
UPS
Solar Inverters
Welding
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