IRGS4062DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

1.6V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

10.668mm

IGBT Type :

Trench

Polarity/Channel Type :

N-Channel

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2

Weight :

260.39037mg

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

RoHS Status :

RoHS Compliant

Power Dissipation :

250W

Switching Energy :

115μJ (on), 600μJ (off)

Turn On Time :

64 ns

Mounting Type :

Surface Mount

Width :

4.826mm

Max Collector Current :

48A

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Gate-Emitter Thr Voltage-Max :

6.5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Power Dissipation :

250W

Turn Off Time-Nom (toff) :

164 ns

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

1.95V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

96A

Test Condition :

400V, 24A, 10 Ω, 15V

Factory Lead Time :

13 Weeks

Base Part Number :

IRGS4062DPBF

Element Configuration :

Single

Reverse Recovery Time :

89 ns

Height :

9.65mm

Td (on/off) @ 25°C :

41ns/104ns

Published :

2009

Packaging :

Tube

REACH SVHC :

No SVHC

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

Mount :

Surface Mount

Gate Charge :

50nC

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Breakdown Voltage :

600V

Fall Time-Max (tf) :

41ns

Case Connection :

COLLECTOR