IRGS4055PBF

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Mfr.Part #
IRGS4055PBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 300V 110A 255W D2PAK
Stock
7,037
In Stock :
7,037

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Operating Temperature :
-40°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Packaging :
Tube
IGBT Type :
Trench
Reach Compliance Code :
Compliant
Voltage - Collector Emitter Breakdown (Max) :
300V
Gate-Emitter Thr Voltage-Max :
5V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Published :
2007
Gate Charge :
132nC
Power - Max :
255W
Current - Collector (Ic) (Max) :
110A
Input Type :
Standard
Td (on/off) @ 25°C :
44ns/245ns
RoHS Status :
RoHS Compliant
Power Dissipation-Max (Abs) :
255W
Rise Time-Max :
55ns
ECCN Code :
EAR99
Gate-Emitter Voltage-Max :
30V
Fall Time-Max (tf) :
198ns
Polarity/Channel Type :
N-Channel
Mounting Type :
Surface Mount
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 110A
Test Condition :
180V, 35A, 10 Ω
Datasheets
IRGS4055PBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGS4055PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IRGS4055PBF pinout, IRGS4055PBF datasheet PDF, IRGS4055PBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGS4055PBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGS4055PBF


IRGS4055PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGS4055PBF Description


IRGS4055PBF is a 300v PDP trench IGBT. This IGBT is specifically designed for applications in Plasma Display Panels. This IRGS4055PBF utilizes advanced trench IGBT technology to achieve low VcE(on) and low Epul .sE TM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.



IRGS4055PBF Features


Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recoverycircuits in PDP applications

Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiency

High repetitive peak current capability

Lead-Free package



IRGS4055PBF Applications


Automotive 

Hybrid, electric & powertrain systems 

Industrial 

Aerospace & Defense 

Enterprise systems 

Enterprise projectors


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