IRGS30B60KTRRP

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Voltage-Max :

20V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Fall Time-Max (tf) :

42ns

Element Configuration :

Single

Number of Pins :

3

Max Power Dissipation :

370W

Transistor Element Material :

SILICON

Switching Energy :

350μJ (on), 825μJ (off)

Current - Collector Pulsed (Icm) :

120A

IGBT Type :

NPT

Polarity/Channel Type :

N-Channel

Factory Lead Time :

9 Weeks

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Turn On Time :

74 ns

Mount :

Surface Mount

Test Condition :

400V, 30A, 10 Ω, 15V

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

237 ns

Max Collector Current :

78A

JESD-609 Code :

e3

Transistor Application :

Motor Control

Gate-Emitter Thr Voltage-Max :

5.5V

Collector Emitter Voltage (VCEO) :

2.35V

Weight :

260.39037mg

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge :

102nC

Peak Reflow Temperature (Cel) :

260

Power - Max :

370W

JESD-30 Code :

R-PSSO-G2

Max Breakdown Voltage :

600V

Td (on/off) @ 25°C :

46ns/185ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

Published :

2005

Collector Emitter Saturation Voltage :

1.95V

Number of Elements :

1

Case Connection :

COLLECTOR

Base Part Number :

IRGS30B60KPBF