IRGS30B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

11 Weeks

Terminal Form :

Gull wing

Radiation Hardening :

No

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

120A

Gate Charge :

102nC

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

Mount :

Surface Mount

Turn On Time :

74 ns

Max Collector Current :

78A

REACH SVHC :

No SVHC

Td (on/off) @ 25°C :

46ns/185ns

Collector Emitter Breakdown Voltage :

600V

Fall Time-Max (tf) :

42ns

Test Condition :

400V, 30A, 10 Ω, 15V

Gate-Emitter Thr Voltage-Max :

5.5V

Collector Emitter Voltage (VCEO) :

2.35V

Power Dissipation :

370W

Number of Terminations :

2

Gate-Emitter Voltage-Max :

20V

Switching Energy :

350μJ (on), 825μJ (off)

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Height :

4.699mm

Width :

4.83mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Pins :

3

Collector Emitter Saturation Voltage :

2.35V

Length :

10.668mm

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Turn On Delay Time :

46 ns

Published :

2005

Base Part Number :

IRGS30B60KPBF

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

IGBT Type :

NPT

Max Power Dissipation :

370W

Turn Off Time-Nom (toff) :

237 ns

Transistor Application :

Motor Control

Lead Free :

Lead Free

Turn-Off Delay Time :

185 ns

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

30