IRGP50B60PD1-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power Dissipation-Max (Abs) :

390W

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

161 ns

Input Type :

Standard

RoHS Status :

RoHS Compliant

Switching Energy :

255μJ (on), 375μJ (off)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

150A

Rise Time-Max :

20ns

Test Condition :

390V, 33A, 3.3 Ω, 15V

Package / Case :

TO-3P-3 Full Pack

Fall Time-Max (tf) :

20ns

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Reach Compliance Code :

Compliant

Additional Feature :

High Reliability

Qualification Status :

Not Qualified

Published :

2008

Factory Lead Time :

14 Weeks

Td (on/off) @ 25°C :

30ns/130ns

Voltage - Collector Emitter Breakdown (Max) :

600V

Power - Max :

390W

Number of Terminations :

3

Current - Collector (Ic) (Max) :

75A

Surface Mount :

No

Gate Charge :

205nC

Reverse Recovery Time :

42ns

Vce(on) (Max) @ Vge, Ic :

2.85V @ 15V, 50A

Gate-Emitter Voltage-Max :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

39 ns

Terminal Position :

Single

Gate-Emitter Thr Voltage-Max :

5V

Mounting Type :

Through Hole

IGBT Type :

NPT

JEDEC-95 Code :

TO-247AD

Transistor Application :

POWER CONTROL