IRGP20B60PDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

20ns/115ns

Transistor Application :

POWER CONTROL

Test Condition :

390V, 13A, 10 Ω, 15V

Mounting Type :

Through Hole

Gate-Emitter Thr Voltage-Max :

5V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Factory Lead Time :

14 Weeks

Collector Emitter Saturation Voltage :

2.05V

Lead Free :

Lead Free

Published :

2003

Current - Collector Pulsed (Icm) :

80A

Polarity/Channel Type :

N-Channel

Packaging :

Bulk

Fall Time-Max (tf) :

17ns

Input Type :

Standard

Current Rating :

40A

IGBT Type :

NPT

Turn On Delay Time :

20 ns

Reverse Recovery Time :

42 ns

Element Configuration :

Single

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

138 ns

Length :

15.9mm

Number of Terminations :

3

Height :

20.3mm

Gate Charge :

68nC

Number of Elements :

1

Width :

5.3mm

ECCN Code :

EAR99

Turn On Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Voltage - Rated DC :

600V

Turn-Off Delay Time :

115 ns

Max Power Dissipation :

220W

Collector Emitter Voltage (VCEO) :

2.8V

Rise Time :

5ns

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

95μJ (on), 100μJ (off)

Radiation Hardening :

No

Number of Pins :

3

Package / Case :

TO-247-3

Termination :

Through Hole

JEDEC-95 Code :

TO-247AC

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

40A

Power Dissipation :

220W