IRGP30B60KD-EP

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Mfr.Part #
IRGP30B60KD-EP
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 60A 304W TO247AD
Stock
2,298
In Stock :
2,298

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Lead Free :
Lead Free
Transistor Application :
Motor Control
Td (on/off) @ 25°C :
46ns/185ns
Voltage - Rated DC :
600V
Max Power Dissipation :
304W
IGBT Type :
NPT
Turn Off Time-Nom (toff) :
237 ns
Published :
2004
Switching Energy :
350μJ (on), 825μJ (off)
JEDEC-95 Code :
TO-247AD
Collector Emitter Saturation Voltage :
2.35V
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
46 ns
Gate Charge :
102nC
Mount :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2.35V @ 15V, 30A
Number of Pins :
3
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
600V
Turn On Time :
74 ns
Mounting Type :
Through Hole
Factory Lead Time :
14 Weeks
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-247-3
Test Condition :
400V, 30A, 10 Ω, 15V
Input Type :
Standard
Reverse Recovery Time :
125 ns
Fall Time-Max (tf) :
42ns
Collector Emitter Voltage (VCEO) :
2.35V
Polarity/Channel Type :
N-Channel
Max Collector Current :
60A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Current Rating :
60A
Radiation Hardening :
No
Rise Time :
28ns
Transistor Element Material :
SILICON
Element Configuration :
Single
Gate-Emitter Voltage-Max :
20V
Number of Elements :
1
Turn-Off Delay Time :
185 ns
Current - Collector Pulsed (Icm) :
120A
Power Dissipation :
304W
Gate-Emitter Thr Voltage-Max :
5.5V
Datasheets
IRGP30B60KD-EP
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP30B60KD-EP from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IRGP30B60KD-EP pinout, IRGP30B60KD-EP datasheet PDF, IRGP30B60KD-EP amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP30B60KD-EP ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP30B60KD-EP


IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP30B60KD-EP Description


IRGP30B60KD-EP is a 600v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The transistor IRGP30B60KD-EP provides benchmark efficiency for motor control, and excellent current sharing in Parallel Operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP30B60KD-EP is in the TO-247AD package with 304w Power Dissipation.



IRGP30B60KD-EP Features


Low VcE (on) Non-Punch Through IGBT Technology.

Low Diode VF.

10μs Short Circuit Capability.

Square RBSOA.

Ultrasoft Diode Reverse Recovery Characteristics.

Positive VcE (on) Temperature Coefficient.

TO-247AD Package

Lead-Free



IRGP30B60KD-EP Applications


Communications equipment 

Wired networking 

Industrial 

Lighting 

Personal electronics 

PC & notebooks


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