IRGP30B60KD-EP
- Mfr.Part #
- IRGP30B60KD-EP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 304W TO247AD
- Stock
- 2,298
- In Stock :
- 2,298
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Lead Free :
- Lead Free
- Transistor Application :
- Motor Control
- Td (on/off) @ 25°C :
- 46ns/185ns
- Voltage - Rated DC :
- 600V
- Max Power Dissipation :
- 304W
- IGBT Type :
- NPT
- Turn Off Time-Nom (toff) :
- 237 ns
- Published :
- 2004
- Switching Energy :
- 350μJ (on), 825μJ (off)
- JEDEC-95 Code :
- TO-247AD
- Collector Emitter Saturation Voltage :
- 2.35V
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 46 ns
- Gate Charge :
- 102nC
- Mount :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.35V @ 15V, 30A
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 600V
- Turn On Time :
- 74 ns
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Input Type :
- Standard
- Reverse Recovery Time :
- 125 ns
- Fall Time-Max (tf) :
- 42ns
- Collector Emitter Voltage (VCEO) :
- 2.35V
- Polarity/Channel Type :
- N-Channel
- Max Collector Current :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current Rating :
- 60A
- Radiation Hardening :
- No
- Rise Time :
- 28ns
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 185 ns
- Current - Collector Pulsed (Icm) :
- 120A
- Power Dissipation :
- 304W
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Datasheets
- IRGP30B60KD-EP

IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP30B60KD-EP Description
IRGP30B60KD-EP is a 600v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The transistor IRGP30B60KD-EP provides benchmark efficiency for motor control, and excellent current sharing in Parallel Operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP30B60KD-EP is in the TO-247AD package with 304w Power Dissipation.
IRGP30B60KD-EP Features
Low VcE (on) Non-Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VcE (on) Temperature Coefficient.
TO-247AD Package
Lead-Free
IRGP30B60KD-EP Applications
Communications equipment
Wired networking
Industrial
Lighting
Personal electronics
PC & notebooks
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