IRGP20B120UD-EP
- Mfr.Part #
- IRGP20B120UD-EP
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT, 40A, 1200V, N-CHANNEL, TO-
- Stock
- 18,485
- In Stock :
- 18,485
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 14 Weeks
- Reverse Recovery Time :
- 300 ns
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 1.2kV
- Turn-Off Delay Time :
- 204 ns
- Mount :
- Through Hole
- Rise Time :
- 20ns
- Polarity/Channel Type :
- N-Channel
- Test Condition :
- 600V, 20A, 5 Ω, 15V
- Gate-Emitter Thr Voltage-Max :
- 6V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 4.85V
- Switching Energy :
- 850μJ (on), 425μJ (off)
- Collector Emitter Breakdown Voltage :
- 1.2kV
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- JEDEC-95 Code :
- TO-247AD
- Turn Off Time-Nom (toff) :
- 228 ns
- Packaging :
- Bulk
- Case Connection :
- Isolated
- Lead Free :
- Lead Free
- Transistor Application :
- POWER CONTROL
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 120A
- Number of Pins :
- 3
- Gate Charge :
- 169nC
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Power Dissipation :
- 300W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 40A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Published :
- 1999
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 300W
- Number of Elements :
- 1
- Vce(on) (Max) @ Vge, Ic :
- 4.85V @ 15V, 40A
- Max Collector Current :
- 40A
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 3.05V
- Turn On Delay Time :
- 50 ns
- Turn On Time :
- 70 ns
- IGBT Type :
- NPT
- Datasheets
- IRGP20B120UD-EP

IRGP20B120UD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP20B120UD-EP Description
IRGP20B120UD-EP is a 1200v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP20B120UD-EP is optimized for Welding, UPS, and Induction Heating Applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP20B120UD-EP is in the TO-247AD package with 300W power dissipation.
IRGP20B120UD-EP Features
UltraFast Non-Punch Through (NPT) Technology
Low Diode VF (1.67V Typical @ 20A & 25°C)
10 μs Short Circuit Capability
Square RBSOA
UltraSoft Diode Recovery Characteristics
Positive VCE(on) Temperature Coefficient
Extended Lead TO-247AD Package
Lead-Free
IRGP20B120UD-EP Applications
Welding
UPS
Induction heating
Automotive
Infotainment & cluster
Industrial
Electronic point of sale (EPOS)
Personal electronics
Gaming
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