IRGP20B120UD-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Collector Emitter Saturation Voltage :

3.05V

Test Condition :

600V, 20A, 5 Ω, 15V

Gate-Emitter Thr Voltage-Max :

6V

REACH SVHC :

No SVHC

Turn On Time :

70 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

300 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Case Connection :

Isolated

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

1.2kV

Turn On Delay Time :

50 ns

Factory Lead Time :

14 Weeks

Collector Emitter Voltage (VCEO) :

4.85V

JEDEC-95 Code :

TO-247AD

Power Dissipation :

300W

Operating Temperature :

-55°C~150°C TJ

Packaging :

Bulk

Current Rating :

40A

IGBT Type :

NPT

Package / Case :

TO-247-3

Turn-Off Delay Time :

204 ns

Mount :

Through Hole

Vce(on) (Max) @ Vge, Ic :

4.85V @ 15V, 40A

ECCN Code :

EAR99

Number of Pins :

3

Input Type :

Standard

Rise Time :

20ns

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

228 ns

Number of Terminations :

3

Max Collector Current :

40A

Transistor Element Material :

SILICON

Published :

1999

Current - Collector Pulsed (Icm) :

120A

Gate Charge :

169nC

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Switching Energy :

850μJ (on), 425μJ (off)

Max Power Dissipation :

300W

Lead Free :

Lead Free

Voltage - Rated DC :

1.2kV

RoHS Status :

RoHS Compliant

Transistor Application :

POWER CONTROL