IRGP4069PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

46ns/105ns

Max Collector Current :

76A

IGBT Type :

Trench

Fall Time-Max (tf) :

54ns

Width :

5.3086mm

Collector Emitter Saturation Voltage :

1.6V

Switching Energy :

390μJ (on), 632μJ (off)

Transistor Application :

POWER CONTROL

Test Condition :

400V, 35A, 10 Ω, 15V

Gate Charge :

104nC

Number of Terminations :

3

Turn Off Time-Nom (toff) :

188 ns

JEDEC-95 Code :

TO-247AC

Current - Collector Pulsed (Icm) :

105A

Rise Time-Max :

42ns

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

6.5V

Number of Elements :

1

Height :

20.7mm

Input Type :

Standard

Turn-Off Delay Time :

127 ns

Element Configuration :

Single

Power Dissipation :

268W

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Max Power Dissipation :

268W

Package / Case :

TO-247-3

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 35A

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Turn On Time :

78 ns

REACH SVHC :

No SVHC

Turn On Delay Time :

43 ns

Number of Pins :

3

Mounting Type :

Through Hole

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

1.85V

Transistor Element Material :

SILICON

Length :

15.87mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

Published :

2004

Case Connection :

COLLECTOR