IRGP4069-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Time :

78 ns

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 35A

Transistor Element Material :

SILICON

Max Power Dissipation :

268W

Current - Collector Pulsed (Icm) :

105A

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Td (on/off) @ 25°C :

46ns/105ns

Rise Time-Max :

42ns

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

Switching Energy :

390μJ (on), 632μJ (off)

Element Configuration :

Single

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Published :

2011

Gate-Emitter Thr Voltage-Max :

6.5V

Qualification Status :

Not Qualified

Power - Max :

268W

Gate Charge :

104nC

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

1.6V

Turn Off Time-Nom (toff) :

188 ns

Max Collector Current :

76A

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR

Number of Terminations :

3

IGBT Type :

Trench

Fall Time-Max (tf) :

54ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

1.85V

Package / Case :

TO-247-3

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Packaging :

Tube

RoHS Status :

RoHS Compliant

Test Condition :

400V, 35A, 10 Ω, 15V

Number of Pins :

3

JEDEC-95 Code :

TO-247AD

Transistor Application :

POWER CONTROL