IRGIB6B60KDPBF
- Mfr.Part #
- IRGIB6B60KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT W/ULTRAFAST SOFT RECOVERY D
- Stock
- 35,728
- In Stock :
- 35,728
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 16 Weeks
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Turn On Time :
- 45 ns
- Max Power Dissipation :
- 38W
- Current Rating :
- 13A
- Voltage - Rated DC :
- 600V
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 11A
- Number of Pins :
- 3
- Turn Off Time-Nom (toff) :
- 258 ns
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Fall Time-Max (tf) :
- 27ns
- Td (on/off) @ 25°C :
- 25ns/215ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 17ns
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 38W
- Collector Emitter Breakdown Voltage :
- 600V
- Case Connection :
- Isolated
- Collector Emitter Saturation Voltage :
- 1.8V
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Weight :
- 2.299997g
- Gate Charge :
- 18.2nC
- Transistor Element Material :
- SILICON
- Width :
- 4.8006mm
- Transistor Application :
- Motor Control
- ECCN Code :
- EAR99
- Published :
- 2004
- IGBT Type :
- NPT
- Current - Collector Pulsed (Icm) :
- 22A
- Switching Energy :
- 110μJ (on), 135μJ (off)
- Input Type :
- Standard
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Height :
- 16.002mm
- Gate-Emitter Voltage-Max :
- 20V
- Reverse Recovery Time :
- 70 ns
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Length :
- 10.5918mm
- Datasheets
- IRGIB6B60KDPBF

IRGIB6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGIB6B60KDPBF Description
The IRGIB6B60KDPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRGIB6B60KDPBF Features
-
Square RBSOA.
-
Ultrasoft Diode Reverse Recovery Characteristics.
-
Positive VCE (on) Temperature Coefficient.
-
Lead-Free.
-
Low VCE (on) Non-Punch Through IGBT Technology.
-
Low Diode VF.
-
10μs Short Circuit Capability.
IRGIB6B60KDPBF Applications
-
Industrial
-
Motor Control
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