IRGIB15B60KD1P
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- Mfr.Part #
- IRGIB15B60KD1P
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 19A 52W TO220FP
- Stock
- 13,995
- In Stock ：
- 13,995
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 56nC
- Packaging :
- Tube
- Power Dissipation :
- 52W
- Max Collector Current :
- 19A
- Radiation Hardening :
- No
- Weight :
- 2.299997g
- Current Rating :
- 12A
- Turn Off Time-Nom (toff) :
- 250 ns
- ECCN Code :
- EAR99
- Reverse Recovery Time :
- 67 ns
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 15A
- Max Power Dissipation :
- 52W
- Input Type :
- Standard
- JEDEC-95 Code :
- TO-220AB
- Turn On Time :
- 55 ns
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Test Condition :
- 400V, 15A, 22 Ω, 15V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 38A
- Published :
- 2004
- IGBT Type :
- NPT
- Lead Free :
- Contains Lead
- Width :
- 4.83mm
- Package / Case :
- TO-220-3 Full Pack
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- Motor Control
- RoHS Status :
- ROHS3 Compliant
- Height :
- 16.12mm
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Mount :
- Through Hole
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Saturation Voltage :
- 1.8V
- Rise Time :
- 35ns
- Number of Elements :
- 1
- Length :
- 10.63mm
- Voltage - Rated DC :
- 600V
- Switching Energy :
- 127μJ (on), 334μJ (off)
- Collector Emitter Voltage (VCEO) :
- 2.2V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 3
- Td (on/off) @ 25°C :
- 30ns/173ns
- Datasheets
- IRGIB15B60KD1P
IRGIB15B60KD1P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGIB15B60KD1P Description
IRGIB15B60KD1P is an insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies. It's made for mid-frequency applications and responds swiftly to provide the user the most bang for their buck. To give the best IGBT transistors, the IRGIB15B60KD1P uses FRED optimized diodes, and it is composed of silicon to decrease switching and conduction losses for higher efficiency, reduced heat concerns, and improved power density, according to IRGIB15B60KD1P datasheet.
The IRGIB15B60KD1P was created with medium to high power modules in mind. A Solderable Front Metal (SFM) die can be used to eliminate connecting wires in modules that require the highest dependability, allowing for double-sided cooling for increased thermal performance, reliability, and efficiency.
IRGIB15B60KD1P Features
-
Lead-Free
-
Low Diode VF.
-
Square RBSOA.
-
10μs Short Circuit Capability.
-
Positive VCE (on) Temperature Coefficient.
-
Ultrasoft Diode Reverse Recovery Characteristics.
-
Maximum Junction Temperature Rated at 175°C
-
Low VCE (on) Non-Punch Through IGBT Technology.
IRGIB15B60KD1P Applications
-
IF application
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