IRGI4086PBF

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Mfr.Part #
IRGI4086PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 300V 25A 43W TO220AB
Stock
7,129
In Stock :
7,129

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
RoHS Status :
RoHS Compliant
Max Power Dissipation :
43W
Package / Case :
TO-220-3 Full Pack
Packaging :
Tube
Voltage - Collector Emitter Breakdown (Max) :
300V
Operating Temperature :
-40°C~150°C TJ
Max Collector Current :
25A
Max Operating Temperature :
150°C
Radiation Hardening :
No
REACH SVHC :
No SVHC
Mount :
Through Hole
Mounting Type :
Through Hole
Input Type :
Standard
Current - Collector (Ic) (Max) :
25A
Collector Emitter Saturation Voltage :
1.55V
Vce(on) (Max) @ Vge, Ic :
2.96V @ 15V, 120A
Element Configuration :
Single
Td (on/off) @ 25°C :
36ns/112ns
Supplier Device Package :
TO-220AB Full-Pak
Min Operating Temperature :
-40°C
IGBT Type :
Trench
Gate Charge :
65nC
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Test Condition :
196V, 25A, 10Ohm
Published :
2009
Collector Emitter Voltage (VCEO) :
2.96V
Power - Max :
43W
Collector Emitter Breakdown Voltage :
300V
Power Dissipation :
43W
Datasheets
IRGI4086PBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGI4086PBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IRGI4086PBF pinout, IRGI4086PBF datasheet PDF, IRGI4086PBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGI4086PBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGI4086PBF


IRGI4086PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGI4086PBF Description


IRGI4086PBF is a 300v PDP trench IGBT. This IGBT IRGI4086PBF is specifically designed for applications in Plasma Display Panels. This transistor IRGI4086PBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRGI4086PBF a highly efficient, robust, and reliable device for PDP applications.



IRGI4086PBF Features


Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery Circuits in PDP Applications

Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency

High Repetitive Peak Current Capability

Lead-Free Package



IRGI4086PBF Applications


Automotive 

Infotainment & cluster 

Industrial 

Lighting 

Personal electronics 

Gaming


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