IRGIB10B60KD1P

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Current Rating :

16A

IGBT Type :

NPT

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Mounting Type :

Through Hole

Switching Energy :

156μJ (on), 165μJ (off)

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

32A

Transistor Application :

Motor Control

Collector Emitter Saturation Voltage :

2.1V

Turn Off Time-Nom (toff) :

288 ns

Published :

2004

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Max Power Dissipation :

44W

Operating Temperature :

-55°C~175°C TJ

Reverse Recovery Time :

79 ns

Voltage - Rated DC :

600V

Mount :

Through Hole

Gate-Emitter Voltage-Max :

20V

Test Condition :

400V, 10A, 50 Ω, 15V

Rise Time :

24ns

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

3

Fall Time-Max (tf) :

87ns

Td (on/off) @ 25°C :

25ns/180ns

ECCN Code :

EAR99

Weight :

2.299997g

Case Connection :

Isolated

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

5.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate Charge :

41nC

Collector Emitter Voltage (VCEO) :

2.1V

Max Collector Current :

16A

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 10A

Packaging :

Tube

Turn On Time :

46 ns

Factory Lead Time :

16 Weeks