IRGI4090PBF

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Mfr.Part #
IRGI4090PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 300V 21A 34W TO220ABFP
Stock
9,009
In Stock :
9,009

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Power - Max :
34W
Power Dissipation :
34W
Voltage - Collector Emitter Breakdown (Max) :
300V
Collector Emitter Breakdown Voltage :
300V
Packaging :
Tube
Mount :
Through Hole
Test Condition :
240V, 11A, 10Ohm
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
1.94V
Input Type :
Standard
Number of Pins :
3
Supplier Device Package :
TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic :
1.94V @ 15V, 30A
Package / Case :
TO-220-3 Full Pack
Max Power Dissipation :
34W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge :
34nC
Min Operating Temperature :
-40°C
Operating Temperature :
-40°C~150°C TJ
Td (on/off) @ 25°C :
20ns/99ns
Current - Collector (Ic) (Max) :
21A
Max Operating Temperature :
150°C
IGBT Type :
Trench
Max Collector Current :
21A
Element Configuration :
Single
Published :
2008
Collector Emitter Voltage (VCEO) :
1.94V
RoHS Status :
RoHS Compliant
Datasheets
IRGI4090PBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGI4090PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:-40°C~150°C TJ, IRGI4090PBF pinout, IRGI4090PBF datasheet PDF, IRGI4090PBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGI4090PBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGI4090PBF


IRGI4090PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGI4090PBF                 Description


This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced   trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel   efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current   capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP   applications.



IRGI4090PBF                Features


 Advanced Trench IGBT Technology

 Optimized for Sustain and Energy Recovery

circuits in PDP applications

 Low VCE(on) and Energy per Pulse (EPULSETM)

for improved panel efficiency

 High repetitive peak current capability

 Lead Free package

 

IRGI4090PBF                 Applications


.Power Supply for USB OTG for:

- Cellular Phones -Smart Phones -PDAs

- HandheldPCs - Digital Cameras

Camcorders


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