IRFPG40

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Mfr.Part #
IRFPG40
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 4.3A TO247-3
Stock
9,368
In Stock :
9,368

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
20.7mm
Voltage - Rated DC :
1kV
Supplier Device Package :
TO-247-3
Mount :
Through Hole
Width :
5.31mm
Power Dissipation :
150W
RoHS Status :
Non-RoHS Compliant
Min Operating Temperature :
-55°C
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
4.3A Tc
Lead Free :
Contains Lead
Gate to Source Voltage (Vgs) :
20V
Drain to Source Resistance :
3.5Ohm
Package / Case :
TO-247-3
Packaging :
Tube
Power Dissipation-Max :
150W Tc
Number of Pins :
3
Weight :
38.000013g
Input Capacitance :
1.6nF
Drain to Source Breakdown Voltage :
1kV
Current Rating :
4.3A
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Rise Time :
33ns
Vgs (Max) :
±20V
Turn On Delay Time :
15 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Published :
2009
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
4.3A
Length :
15.87mm
Number of Channels :
1
Turn-Off Delay Time :
100 ns
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
3.5Ohm @ 2.6A, 10V
Drain to Source Voltage (Vdss) :
1000V
Element Configuration :
Single
Rds On Max :
3.5 Ω
Fall Time (Typ) :
30 ns
Datasheets
IRFPG40
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPG40 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, IRFPG40 pinout, IRFPG40 datasheet PDF, IRFPG40 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPG40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPG40


N-Channel Tube 3.5Ohm @ 2.6A, 10V ±20V 1600pF @ 25V 120nC @ 10V 1000V TO-247-3

IRFPG40 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3.5Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFPG40 Features


a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 3.5Ohm
a 1000V drain to source voltage (Vdss)


IRFPG40 Applications


There are a lot of Vishay Siliconix
IRFPG40 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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