IRFPG40
- Mfr.Part #
- IRFPG40
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 4.3A TO247-3
- Stock
- 9,368
- In Stock :
- 9,368
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.7mm
- Voltage - Rated DC :
- 1kV
- Supplier Device Package :
- TO-247-3
- Mount :
- Through Hole
- Width :
- 5.31mm
- Power Dissipation :
- 150W
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 3.5Ohm
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Power Dissipation-Max :
- 150W Tc
- Number of Pins :
- 3
- Weight :
- 38.000013g
- Input Capacitance :
- 1.6nF
- Drain to Source Breakdown Voltage :
- 1kV
- Current Rating :
- 4.3A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Rise Time :
- 33ns
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Published :
- 2009
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 4.3A
- Length :
- 15.87mm
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 100 ns
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 3.5Ohm @ 2.6A, 10V
- Drain to Source Voltage (Vdss) :
- 1000V
- Element Configuration :
- Single
- Rds On Max :
- 3.5 Ω
- Fall Time (Typ) :
- 30 ns
- Datasheets
- IRFPG40

N-Channel Tube 3.5Ohm @ 2.6A, 10V ±20V 1600pF @ 25V 120nC @ 10V 1000V TO-247-3
IRFPG40 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3.5Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFPG40 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 3.5Ohm
a 1000V drain to source voltage (Vdss)
IRFPG40 Applications
There are a lot of Vishay Siliconix
IRFPG40 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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