IRFP150NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

20V

Length :

15.875mm

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Vgs (Max) :

±20V

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

175°C

Drain to Source Breakdown Voltage :

100V

Published :

1998

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Width :

5.3mm

Number of Elements :

1

Turn-Off Delay Time :

45 ns

Packaging :

Tube

Mount :

Through Hole

Termination :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Recovery Time :

270 ns

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC :

100V

Avalanche Energy Rating (Eas) :

420 mJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

36mOhm

Power Dissipation-Max :

160W Tc

Continuous Drain Current (ID) :

42A

Lead Free :

Contains Lead, Lead Free

Series :

HEXFET®

Number of Terminations :

3

JEDEC-95 Code :

TO-247AC

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Current Rating :

42A

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Rise Time :

56ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Dual Supply Voltage :

100V

Height :

24.99mm

Turn On Delay Time :

11 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Package / Case :

TO-247-3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

36m Ω @ 23A, 10V

Threshold Voltage :

4V

Lead Pitch :

5.45mm

Power Dissipation :

140W

Fall Time (Typ) :

40 ns

Number of Pins :

3