IRF7907PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

Power - Max :

2W

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

15 mJ

JESD-609 Code :

e3

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.35V @ 25µA

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

9.1A 11A

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

11A

Drain-source On Resistance-Max :

0.0118Ohm

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Published :

2006

Rds On (Max) @ Id, Vgs :

16.4m Ω @ 9.1A, 10V

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

85A

JESD-30 Code :

R-PDSO-G8

Base Part Number :

IRF7907PBF

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Power Dissipation-Max (Abs) :

2W