IRF7101TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Resistance :

100MOhm

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Dual Supply Voltage :

20V

Mount :

Surface Mount

ECCN Code :

EAR99

Row Spacing :

6.3 mm

Series :

HEXFET®

Power Dissipation :

2W

Turn On Delay Time :

7 ns

Lead Free :

Lead Free

Width :

3.9878mm

Number of Terminations :

8

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

20V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Number of Elements :

2

JESD-609 Code :

e3

Current Rating :

3.5A

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Voltage - Rated DC :

20V

Element Configuration :

Dual

Rise Time :

10ns

Turn-Off Delay Time :

24 ns

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Power Rating :

2W

Continuous Drain Current (ID) :

3.5A

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

14A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Base Part Number :

IRF7101PBF

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Nominal Vgs :

3 V

Published :

1997

Max Power Dissipation :

2W

Mounting Type :

Surface Mount

Number of Pins :

8

Length :

4.9784mm