IRF7101TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Operating Temperature :

-55°C~150°C TJ

Resistance :

100MOhm

Base Part Number :

IRF7101PBF

Published :

1997

Rise Time :

10ns

REACH SVHC :

No SVHC

Mount :

Surface Mount

Turn On Delay Time :

7 ns

ECCN Code :

EAR99

Power Rating :

2W

Number of Elements :

2

Continuous Drain Current (ID) :

3.5A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current Rating :

3.5A

Length :

4.9784mm

Pulsed Drain Current-Max (IDM) :

14A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

20V

Height :

1.4986mm

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

FET Feature :

Logic Level Gate

Nominal Vgs :

3 V

Power Dissipation :

2W

Max Power Dissipation :

2W

Threshold Voltage :

3V

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

24 ns

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Row Spacing :

6.3 mm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Width :

3.9878mm

Fall Time (Typ) :

30 ns

Dual Supply Voltage :

20V

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR