IRF7101TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

24 ns

Number of Elements :

2

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Rise Time :

10ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Width :

3.9878mm

Height :

1.4986mm

Power Rating :

2W

Transistor Element Material :

SILICON

Element Configuration :

Dual

Current Rating :

3.5A

Base Part Number :

IRF7101PBF

Dual Supply Voltage :

20V

Fall Time (Typ) :

30 ns

Threshold Voltage :

3V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

14A

Radiation Hardening :

No

Voltage - Rated DC :

20V

Mount :

Surface Mount

Length :

4.9784mm

Power Dissipation :

2W

REACH SVHC :

No SVHC

Resistance :

100MOhm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.5A

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

8

Row Spacing :

6.3 mm

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Nominal Vgs :

3 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR