IRF7105QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2W

Mount :

Surface Mount

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Power Dissipation :

2W

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Turn-Off Delay Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

25V

Number of Pins :

8

Continuous Drain Current (ID) :

3.5A

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Mounting Type :

Surface Mount

Published :

2014

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

IRF7105QPBF

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Min Operating Temperature :

-55°C

Width :

3.9878mm

FET Type :

N and P-Channel