IRF7103QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 25V

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.4W

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Mount :

Surface Mount

Turn-Off Delay Time :

15 ns

Base Part Number :

IRF7103QPBF

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

Max Power Dissipation :

2.4W

Turn On Delay Time :

5.1 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Number of Pins :

8

FET Feature :

Standard

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2010

Mounting Type :

Surface Mount

Rise Time :

1.7ns

Drain to Source Voltage (Vdss) :

50V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Operating Temperature :

175°C

Fall Time (Typ) :

2.3 ns

Continuous Drain Current (ID) :

3A

RoHS Status :

ROHS3 Compliant