IRF7103Q

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

3A

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 25V

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.13Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

2.4W

Published :

2009

Mounting Type :

Surface Mount

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Number of Terminations :

8

DS Breakdown Voltage-Min :

50V

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

MS-012AA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Avalanche Energy Rating (Eas) :

22 mJ

Power - Max :

2.4W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

25A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

3A