IRF7103PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Packaging :

Tube

Power Dissipation-Max (Abs) :

2W

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.13Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

MS-012AA

FET Feature :

Standard

Number of Elements :

2

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power - Max :

2W

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

50V

Drain Current-Max (Abs) (ID) :

3A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

3A

Surface Mount :

yes

Base Part Number :

IRF7103PBF

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Published :

1997

Pulsed Drain Current-Max (IDM) :

10A

Factory Lead Time :

12 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR