IRF7103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Turn-Off Delay Time :

15 ns

Lead Free :

Contains Lead, Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Recovery Time :

100 ns

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

ECCN Code :

EAR99

Current Rating :

3A

Series :

HEXFET®

Number of Elements :

2

Base Part Number :

IRF7103PBF

Dual Supply Voltage :

50V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Power Dissipation :

2W

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Number of Terminations :

8

Row Spacing :

6.3 mm

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

2 N-Channel (Dual)

Threshold Voltage :

3V

Radiation Hardening :

No

Number of Pins :

8

Max Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Height :

1.4986mm

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Drain to Source Breakdown Voltage :

50V

FET Feature :

Standard

Length :

4.9784mm

Voltage - Rated DC :

50V

Nominal Vgs :

3 V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Mount :

Surface Mount

Manufacturer Package Identifier :

IRF7103TRPBF

Transistor Element Material :

SILICON

Resistance :

130mOhm

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Rise Time :

8ns

Turn On Delay Time :

5.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT