IRF7103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Manufacturer Package Identifier :

IRF7103TRPBF

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Base Part Number :

IRF7103PBF

FET Feature :

Standard

Termination :

SMD/SMT

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Turn-Off Delay Time :

15 ns

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Threshold Voltage :

3V

Row Spacing :

6.3 mm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

3A

Transistor Element Material :

SILICON

Number of Terminations :

8

Terminal Form :

Gull wing

Rise Time :

8ns

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Length :

4.9784mm

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Max Power Dissipation :

2W

Turn On Delay Time :

5.1 ns

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

50V

Nominal Vgs :

3 V

Fall Time (Typ) :

25 ns

Width :

3.9878mm

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Height :

1.4986mm

Element Configuration :

Dual

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Lead Free :

Contains Lead, Lead Free

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Resistance :

130mOhm

Series :

HEXFET®

Recovery Time :

100 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

3A

Dual Supply Voltage :

50V

Published :

1997

Radiation Hardening :

No

Mount :

Surface Mount