IRF7103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Termination :

SMD/SMT

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Number of Terminations :

8

Mounting Type :

Surface Mount

Number of Elements :

2

Turn-Off Delay Time :

15 ns

Published :

1997

Recovery Time :

100 ns

Height :

1.4986mm

Base Part Number :

IRF7103PBF

Resistance :

130mOhm

Max Power Dissipation :

2W

Transistor Element Material :

SILICON

Manufacturer Package Identifier :

IRF7103TRPBF

Vgs(th) (Max) @ Id :

3V @ 250µA

Nominal Vgs :

3 V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Current Rating :

3A

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

50V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2W

Turn On Delay Time :

5.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Lead Free :

Contains Lead, Lead Free

Mount :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Number of Pins :

8

Fall Time (Typ) :

25 ns

ECCN Code :

EAR99

Transistor Application :

SWITCHING

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

50V

Rise Time :

8ns

Width :

3.9878mm

Length :

4.9784mm

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

3A

Radiation Hardening :

No

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

3A

Row Spacing :

6.3 mm

Dual Supply Voltage :

50V