IRF7104TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.4986mm

Base Part Number :

IRF7104PBF

Published :

1997

Element Configuration :

Dual

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Row Spacing :

6.3 mm

Lead Free :

Lead Free

Termination :

SMD/SMT

Series :

HEXFET®

Recovery Time :

100 ns

Threshold Voltage :

-3V

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

12 ns

Width :

3.9878mm

Gate to Source Voltage (Vgs) :

12V

Number of Elements :

2

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 15V

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Dual Supply Voltage :

-20V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Transistor Application :

SWITCHING

Length :

4.9784mm

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Current Rating :

-2.3A

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Voltage - Rated DC :

-20V

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

2W

Mount :

Surface Mount

Continuous Drain Current (ID) :

-2.3A

Nominal Vgs :

-3 V

Current - Continuous Drain (Id) @ 25°C :

2.3A

Terminal Form :

Gull wing

Additional Feature :

ULTRA LOW RESISTANCE

Turn-Off Delay Time :

42 ns

Resistance :

250mOhm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

10A

Rise Time :

16ns

Fall Time (Typ) :

30 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate